The 3-d M O N T E Carlo Simulation of a Semiconductor Device on a Hypercube

نویسندگان

  • U. RANAWAKE
  • C. HUSTER
  • P. LENDERS
  • S. GOODNICK
چکیده

The efficient parallel implementation of a 3-D Monte Carlo device simulator is described. The parallel algorithm was implemented on a 64 node nCUBE multicomputer and its accuracy was validated by generating the static characteristics of a MESFET. Timing measurements were made to study the variation of the speedup of the parallel program as a function of the number of processors. We identify the sources of speedup loss and discuss several techniques for improving the speedup.

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تاریخ انتشار 2007